| abstract |
PROBLEM TO BE SOLVED: To realize a semiconductor device having a CV characteristic equivalent to an ideal CV characteristic by controlling a metal concentration in a metal silicate film provided in an uppermost layer of a high dielectric constant film. In a semiconductor device in which a gate electrode 7b is formed on a silicon substrate 1 via a gate insulating film, the gate insulating film includes a silicon oxide film 4a formed on the silicon substrate 1, and a silicon oxide film 4a. Hf silicate film 5a formed thereon, and nitrogen formed on Hf silicate film 5a, containing Hf at a peak concentration of 1 atomic% to 30 atomic% and containing nitrogen at a peak concentration of 10 atomic% to 30 atomic% It is configured by laminating the containing Hf silicate film 6a. [Selection] Figure 1 |