| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_71e107c93635191f68dd03592ae03a05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-4903
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03F1-3247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2012-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b41a7a48df8c310eea664810ce286e49 |
| publicationDate |
2014-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8633517-B2 |
| titleOfInvention |
Compound semiconductor device and method of manufacturing the same |
| abstract |
An embodiment of a compound semiconductor device includes: a substrate; an electron channel layer and an electron supply layer formed over the substrate; a gate electrode, a source electrode and a drain electrode formed on or above the electron supply layer; a first p-type semiconductor layer formed between the electron supply layer and the gate electrode; and a second p-type semiconductor layer formed between the electron supply layer and at least one of the source electrode and the drain electrode. The one of the source electrode and the drain electrode on the second p-type semiconductor layer includes: a first metal film; and a second metal film which contacts the first metal film on the gate electrode side of the first metal film, and a resistance of which is higher than that of the first metal film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10630285-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11309884-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11749656-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10897249-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9590494-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10756207-B2 |
| priorityDate |
2011-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |