| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2003-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_996406cb7d6021122f9832392ea0c83d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cd19cab15ab458c6cacb1b7e97ef908 |
| publicationDate |
2004-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2004127027-A1 |
| titleOfInvention |
Method for forming titanium silicide contact of semiconductor device |
| abstract |
The present invention is related to a method for forming a titanium silicide contact in a semiconductor device capable of minimizing consumptions of a silicon substrate and performing a low-temperature deposition through the use of an atomic layer deposition technique. The method includes the steps of: forming an inter-layer insulation layer on a silicon substrate; forming a contact hole exposing a portion of the silicon substrate by selectively etching the inter-layer insulation layer; forming a titanium silicide layer on the exposed portion of the silicon substrate by employing an atomic layer deposition technique using a source gas of titanium tetrachloride and a silicon-containing gas; forming a metal barrier layer on the resulting structure; and forming a contact plug by filling a conductive material into the contact hole and planarizing the deposited conductive material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11008505-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7638437-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018052473-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107533962-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7416981-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190042108-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I780157-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006148268-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11162022-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009098733-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10312096-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10103028-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10199230-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I749054-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022195599-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005221612-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008096380-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102259187-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7662717-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102302000-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10535527-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210064429-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9087877-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10964544-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006084263-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I695903-B |
| priorityDate |
2002-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |