| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52 |
| filingDate |
2016-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8b7257f6800baefcc16433bf90060e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6dbdbd958bf8b9a3a082922883b0bb1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_531383e3f947d81639d3f284d5acb2bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_437d14690895e9f410586b0516cdee8c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c39c00bef86fa9981d10fbafeff8bd22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b0f05279b96341768130742ec03d63a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84922a1b9b7ed3a4d9c896e2834e4df7 |
| publicationDate |
2020-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I695903-B |
| titleOfInvention |
Methods for selective deposition of metal silicides via atomic layer deposition (ald) cycles |
| abstract |
Methods for selectively depositing a metal silicide layer are provided herein. In some embodiments, a method of selectively depositing a metal silicide layer includes: (a) providing a substrate having a first layer to a process chamber, wherein the first layer comprises a first surface and a feature formed in the first surface comprising an opening defined by one or more sidewalls and a bottom surface wherein the sidewalls comprise one of silicon oxide or silicon nitride and wherein the bottom surface comprises at least one of silicon or germanium; (b) exposing the substrate to a precursor gas comprising a metal halide; (c) purging the precursor gas from the process chamber using an inert gas; (d) exposing the substrate to a silicon containing gas; (e) purging the silicon containing gas from the process chamber using an inert gas; (f) repeating (b)-(e) to selectively deposit a metal silicide along the bottom surface to a predetermined thickness; and (g) annealing the substrate after depositing the metal silicide layer. |
| priorityDate |
2015-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |