http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101439015-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-408 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate | 2013-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101439015-B1 |
| titleOfInvention | Semiconductor device and method for manufacturing semiconductor device |
| abstract | Provided is a semiconductor device which can easily and stably turn off the nitride semiconductor layer without causing damage to the nitride semiconductor layer. A first semiconductor layer formed on the substrate; a second semiconductor layer formed on the first semiconductor layer; an insulating film formed by sequentially laminating a first insulating film, a second insulating film, and a third insulating film on the second semiconductor layer; A region including a halogen ion is formed in a region immediately below a region where the electrode is formed in the first insulating film, and the third insulating film includes a halogen The above problems are solved by the semiconductor device. |
| priorityDate | 2012-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.