http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008532260-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 |
| filingDate | 2005-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2008532260-A |
| titleOfInvention | Nonvolatile nanocrystal memory and method thereof |
| abstract | The nanocrystalline nonvolatile memory (NVM) (10) has a dielectric (22) between the control gate (26) and the nanocrystal (16). The nitrogen content of the dielectric is sufficient to reduce the places where electrons can be trapped in the dielectric (22). This is obtained by grading the nitrogen concentration. The concentration of nitrogen is highest in the vicinity of the nanocrystal (16) where the electron / hole trap density tends to be maximum, and decreases towards the control gate (26) where the electron / hole trap density is lower. This has been found to have the beneficial effect of reducing the number of places where charge can be trapped. |
| priorityDate | 2005-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.