http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100883795-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94 |
| filingDate | 2002-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100883795-B1 |
| titleOfInvention | Symmetrical trench MOSF device and method of manufacturing the same |
| abstract | Trench MOSFET devices and methods of fabricating the devices are provided. The trench MOSFET device (FIG. 6A) includes a first conductivity type drain region 606; A second conductivity type body region 602 provided over the drain region such that the drain and body region form a first junction; A source region 604 of a first conductivity type provided over the body region such that the source and body region form a second junction; A source metal 610 disposed on an upper surface of the source region; Trenches 608, 609, and 614 extending through the source and body regions into the drain region; a gate region comprising (i) an insulating layer 609 covering the interior of at least a portion of the trench, and (ii) a conductive region 608 in the adjacent trench 609. The body region is separated from the source metal. The doping profile in the body and in at least a portion of the source and drain regions is approximately symmetrical with respect to the central plane of the body region parallel to the major surface of the device. |
| priorityDate | 2001-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.