| abstract |
The present invention relates to a method of manufacturing semiconductor devices. In order to form a surface channel CMOSFET in the process of manufacturing a metal gate, the present invention forms a (TixAly)1-zNz film (where z is 0.0 to 0.2) having the work function value of 4.2 to 4.3 eV on a gate insulating film in a NMOS region, a (TixAly)1-zNz film (where z is 0.3 to 0.6) having a work function value of 4.8 to 5.0 eV on the gate insulating film in a pMOS region, thus implementing a surface channel CMOS device both in the nMOS region and the pMOS region. Therefore, the present invention can reduce the threshold voltage. |