| abstract |
There is provided a semiconductor device having excellent device characteristics and reliability in which V th values of an nMOS transistor and a pMOS transistor are controlled to be values necessary for a low-power device. The semiconductor device includes a pMOS transistor and an nMOS transistor formed by using an SOI substrate. The pMOS transistor is a fully depleted MOS transistor including a first gate electrode comprising at least one type of crystalline phase selected from the group consisting of a WSi 2 crystalline phase, an MoSi 2 crystalline phase, an NiSi crystalline phase, and an NiSi 2 crystalline phase as silicide region ( 1 ). The nMOS transistor is a fully depleted MOS transistor comprising at least one type of crystalline phase selected from the group consisting of a PtSi crystalline phase, a Pt 2 Si crystalline phase, an IrSi crystalline phase, an Ni 2 Si crystalline phase, and an Ni 3 Si crystalline phase as silicide region ( 2 ). |