http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100638159-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335 |
| filingDate | 2005-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100638159-B1 |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | An object of the present invention is to provide a semiconductor device and a method of manufacturing the same, which can use a high dielectric constant insulating film for a gate insulating film without deteriorating transistor characteristics.n n n By patterning the polysilicon film, the gate electrode 16 is formed, and the base protective gas and the high dielectric constant insulating film 14 which form a protective layer for bonding the silicon to protect the silicon substrate 10 and the device isolation film 12 are etched. The high dielectric constant insulating film 14 on the silicon substrate 10 and the element isolation film 12 on both sides of the gate electrode 16 is removed by dry etching using a plasma with a mixed gas containing an etching gas. .n n n n Device isolation film, gate insulation film, high dielectric constant insulation film, sidewall insulation film, impurity diffusion region, source / drain region |
| priorityDate | 2005-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.