| abstract |
According to an aspect of the present invention there is provided a process for fabricating a semiconductor device comprising providing a channel layer, providing a mask on the channel layer, epitaxially growing a contact layer in contact with the channel layer, Epitaxially growing a support layer on the contact layer, the support layer being etched at a higher rate than the contact layer, forming a trench extending past the support layer by removing the mask, And providing a conductor in the trench. Also provided is an intermediate product for the production of a semiconductor device. |