| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_08f001ce25ca0c0a9286a5a7ffe64e17 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48472 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F3-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 |
| filingDate |
2012-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_995a99110bc478d6932fb1a87bcea2a9 |
| publicationDate |
2013-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013076443-A1 |
| titleOfInvention |
Compound semiconductor device and method of manufacturing the same |
| abstract |
An embodiment of a compound semiconductor device includes: a substrate; an electron channel layer and an electron supply layer formed over the substrate; a gate electrode, a source electrode and a drain electrode formed on or above the electron supply layer; and a p-type semiconductor layer formed between the electron supply layer and the gate electrode. The p-type semiconductor layer contains, as a p-type impurity, an element same as that being contained in at least either of the electron channel layer and the electron supply layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102067597-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140139346-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10804369-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140120519-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102080744-B1 |
| priorityDate |
2011-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |