http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100967479-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14612 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-24 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate | 2007-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100967479-B1 |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | The embodiment relates to a method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device according to the embodiment may include forming a gate electrode on a semiconductor substrate, sequentially forming a first oxide film, a nitride film, and a second oxide film on the semiconductor substrate on which the gate electrode is formed. Dry etching the oxide film, wet etching the nitride film, and implanting ions into the semiconductor substrate on which the first oxide film is formed to form source and drain regions on both sides of the gate electrode. When the gate spacer is formed in the semiconductor device, the embodiment may form a residual oxide layer on the silicide layer to prevent plasma damage and leakage current, thereby improving device characteristics of the CMOS image sensor.n n n n Gate spacers, implants |
| priorityDate | 2007-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.