http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100800647-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a17dc10b5bd6e5f0df2ce1aab3bbdce |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28061 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28044 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4941 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2006-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbdd0965f659eb6451876a76e537210a |
| publicationDate | 2008-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100800647-B1 |
| titleOfInvention | Gate electrode formation method of semiconductor device |
| abstract | The present invention relates to the production of a new polyside gate electrode in which an amorphous TiSiN layer is formed between a polysilicon layer and a tungsten silicide layer in a conventional polyside gate to prevent florin diffusion. Since TiSiN is formed on the top of the polysilicon layer, it is possible to prevent florin generated during the deposition of tungsten silicide from penetrating into the gate oxide film, thereby preventing deterioration of the gate oxide film by florin. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8847300-B2 |
| priorityDate | 2006-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.