http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28061
Outgoing Links
| Predicate | Object |
|---|---|
| concordantIPC | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| level | 17^^<http://www.w3.org/2001/XMLSchema#integer> |
| symbol | H01L21/28061 |
| modified | 2022-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| title | Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction |
| type | http://data.epo.org/linked-data/def/cpc/SubGroup |
| broader | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28044 |
Incoming Links
Total number of triples: 2606.