Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b87f33767bd51735f448b56210132d4d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_23d994b3d26382b3031313e93e543007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f493fd6fdb0c6c5adef5f1b7845df792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5efbd16422b99c9a37eb658658103e13 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-0812 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-317 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28506 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28061 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
filingDate |
2012-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2013-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24802b5d4caf4b9b8462b4386cdd9adf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2dc1fc82af50d92801fb4e9a817e1eae http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_432241eea99ec40faca437c470b42c4b |
publicationDate |
2013-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8435890-B2 |
titleOfInvention |
Method to alter silicide properties using GCIB treatment |
abstract |
A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8946081-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013273737-A1 |
priorityDate |
2009-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |