| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28061 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate |
2002-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2006-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-100593826-B1 |
| titleOfInvention |
Dry etching method |
| abstract |
The tungsten silicide layer 104 is etched by plasma etching using a gas of Cl 2 + O 2 as the etching gas. When the etching of the tungsten silicide layer 104 is almost finished, the etching gas is changed to Cl 2 + O 2 + NF 3 , overetched by plasma etching, and polysilicon formed under the tungsten silicide layer 104. The etching process is terminated with the layer 103 etched slightly uniformly. As a result, the remaining film amount of the polysilicon layer 103 can be made uniform compared with the conventional one, and a high quality semiconductor device can be stably manufactured. n n Etching, dry etching, etching gas. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160132769-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102363050-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150130920-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101863992-B1 |
| priorityDate |
2001-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |