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publicationDate 2008-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2008303026-A1
titleOfInvention Semiconductor device and method for manufacturing the device
abstract A semiconductor device and a method for manufacturing the same that includes forming a gate insulating film on a semiconductor substrate; and then forming a doped polysilicon layer on the gate insulating film; and then forming a first metal layer on the doped polysilicon layer; and then forming a metal silicide layer on the first metal layer. Therefore, current leakage can be reduced and generation of boron penetration can be prevented. Forming the doped polysilicon layer on the gate insulating film enables control of a work function while forming a silicide layer having a uniform surface interface is possible by depositing nickel (Ni) and polysilicon on the platinum first metal layer.
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