http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002520876-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66583 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28061 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4941 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate | 1999-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2002-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002520876-A |
| titleOfInvention | Improved gate electrode junction structure by in situ chemical vapor deposition of tungsten and tungsten nitride |
| abstract | (57) Abstract: A gate electrode junction structure is disclosed which is formed by vapor deposition of a tungsten nitride barrier layer (8) and a tungsten plug (9), and in which the vapor deposition of tungsten nitride and tungsten is performed in the same chemical vapor deposition (CVD) chamber. I have. Tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen, and tungsten hexafluoride. Prior to deposition, the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process is performed by a CVD method using tungsten hexafluoride and hydrogen. A tungsten nucleation stage is included in which a process gas including tungsten hexafluoride, diborane, and hydrogen is flowed to a deposition zone of a substrate processing chamber. After the nucleation step, diborane is stopped, but pressure levels and other processing parameters are maintained at conditions suitable for tungsten bulk deposition. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011166160-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007027680-A |
| priorityDate | 1998-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 66.