http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0245934-A2

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filingDate 1987-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47a961594158fd0be63caf8028c37f25
publicationDate 1987-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0245934-A2
titleOfInvention Low pressure chemical vapor deposition of metal silicide
abstract The invention relates to a process for the low pressure chemical vapor deposition (LPCVD) of metal silicide, especially molybdenum silicide, on a substrate at a low temperature. The walls of a LPCVD reactor which contains a heated pedestal for holding a substrate are cooled and the pedestal is heated so the substrate temperature reaches a desired level, depending on the metal silicide to be deposited. A metal halide and a silane or disilane are fed separately into the deposition chamber and mixed behind a small baffle plate at the entrance. The metal silicide is deposited on the substrate surface. It is preferred that the substrate be pre-treated with Hâ‚‚ plasma before deposition.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1069207-A2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0437110-A2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4871691-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0443277-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4957777-A
priorityDate 1986-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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