| abstract |
A method of making an electronic component comprises covering a substrate (100) with a portion (P) delimiting with the substrate a volume (V) filled at least partially with a temporary material, the evacuation of the temporary material by a chimney (C) for access to said volume, and the deposit of a filling material (7) in said volume from precursors brought by the chimney. The method is particularly suitable for producing a gate of a MOS type transistor. In this case, the filling material is conductive, and an electrically insulating coating material (8) can also be deposited in said volume before the conductive filling material. |