| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c72d118f5664072de841f9c5c34b9d99 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4933
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28061
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41741
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66712 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate |
1990-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70befe3f1f81458cbe2f579b80481288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84c16d9958e39ecaff6d360331b26af4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_388d134a41fb7f8b14ce03e21eb073af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49fd33d5b414f17fc7b707fd3c2c639b |
| publicationDate |
1990-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0403113-A2 |
| titleOfInvention |
Field effect semiconductor devices and methods of fabrication thereof |
| abstract |
A multi-cellular power field effect semiconductor device (100) includes a tungsten silicide (134)/polysilicon (132)/oxide gate electrode (131) stack with low sheet resistance. Preferably, a layer of tungsten (136) is also disposed in intimate contact with the source region of the device. This tungsten layer (136) is self-aligned with respect to the aperture in the gate electrode (131) through which the source region is diffused. The presence of this tungsten layer greatly reduces the resulting ohmic contact resistance to the region. If desired, a tungsten layer can also be disposed in contact with the drain region (114) of the device, again, to lower ohmic contact resistance. The device has substantially improved operating characteristics. Novel processes for producing the device are also described. |
| priorityDate |
1989-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |