| abstract |
A semiconductor device (10) includes a gate electrode (61) having a silicon/tungsten nitride/tungsten silicon nitride/tungsten silicide composition. The tungsten nitride film (21) and tungsten suicide film (23) are formed using chemical vapor deposition (CVD). The tungsten nitride film is formed using a tungsten halide and N 2 R 1 R 2 , where each of R 1 and R 2 is hydrogen, an alkyl group, an alkenyl group, or an alkynyl group. The tungsten nitride film (21) is an etch stop when patterning the tungsten silicide film (23). The CVD tungsten nitride film (21) helps to improve gate dielectric integrity and reduces interface traps when compared to a sputtered tungsten nitride film (21). Also, N 2 R 1 R 2 can be used to remove halogens that are adsorbed onto walls of a reaction chamber than is cleaned between depositions of substrates. |