| abstract |
Disclosed is a material for forming a nickel-containing film, which has a low melting point and therefore can be handled as a liquid, which has a high vapor pressure, which can be synthesized readily on an industrial scale, which is stable, and which can be formed into a good nickel-containing film, particularly a good nickel silicide film, readily by a CVD (chemical vapor deposition) method. The material is characterized by comprising a compound represented by formula (1). Ni(R1 aC6H(5-a))(R2 bC5H(5-b)) (1) wherein R1 and R2 independently represent a hydrogen atom or a group represented by formula (2); and a and b independently represent an integer of 0 to 4, and fulfill the requirement represented by the formula 01 and R2 do not represent a hydrogen atom. (2) wherein R3, R4 and R5 independently represent an alkyl group having 1 to 2 carbon atoms. |