| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28512
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28061
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41758
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2009-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2016-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101669470-B1 |
| titleOfInvention |
Semiconductor device including metal silicide layer |
| abstract |
Disclosed is a semiconductor device having a metal silicide layer extending along a fine width along an upper surface of a substrate. A semiconductor device according to the present invention is formed on a substrate so as to define a vacancy extending along an upper surface of the substrate with respect to the substrate and is provided with an insulating film which defines an opening extending from the substrate in a vertical direction A conductive layer formed in the opening and including a first metal; and a metal silicide layer containing the first metal and extending from the conductive layer into the bacillus.n n n n A metal silicide layer, a contact, a vacancy, an amorphous silicon layer, a crystallization |
| priorityDate |
2009-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |