| abstract |
A method for improving uniformity and roundness of a hole diameter of a contact pattern is provided. A block copolymer layer is formed on a substrate having a thin film having a hole pattern formed thereon, and a layer including a block copolymer in which a plurality of types of blocks are bonded so as to cover the thin film. A phase comprising a step, a phase separation step of phase-separating the layer containing the block copolymer, and a phase comprising at least one block of a plurality of types of blocks constituting the block copolymer among the layers containing the block copolymer A selective removal step of selectively removing, wherein a hole diameter of the hole pattern formed in the thin film is 0.8 to 3.1 times a period of the block copolymer, and in the layer formation step, The thickness from the upper surface of the thin film to the surface of the layer containing the block copolymer is made 70% or less of the film thickness of the thin film. [Selection] Figure 1 |