| abstract |
The present disclosure provides a semiconductor device and a method for forming the same. In one embodiment, the method includes: forming a gate dielectric layer on the interface layer; forming a doped layer on the gate dielectric layer, and the doped layer includes dipole inducing element; annealing doped layer to drive dipole inducing element through gate dielectric layer to first side of gate dielectric layer adjacent to interface layer; removing doped layer; forming sacrificial layer on gate On the dielectric layer, the residual dipole-induced element on the second side adjacent to the gate dielectric layer and the sacrificial layer reacts with the material of the sacrificial layer; removing the sacrificial layer; forming a cap layer on the gate dielectric layer; and forming a gate layer on the cap layer. |