http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100844958-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28061 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2007-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2008-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100844958-B1 |
| titleOfInvention | A semiconductor device having a double diffusion barrier and a method of manufacturing the same |
| abstract | SUMMARY OF THE INVENTION The present invention provides a gate having a diffusion barrier capable of satisfying the gate contact resistance value Rc and the sheet resistance value Rs at the same time, and a manufacturing method thereof. The semiconductor device of the present invention is a polysilicon electrode and a tungsten electrode. The diffusion barrier provided therebetween is a Ti / WN x / TiN x diffusion barrier and a tungsten silicide layer stacked on the titanium (Ti) in the order of the first nitrogen-containing tungsten film (WN x ) and the nitrogen-containing titanium film (TiN x ). WSi x ) is made of a combination of WSi x / WN x diffusion barriers in which a second nitrogen-containing tungsten film (WN x ) is stacked on top of the gate contact resistance due to titanium (Ti) of Ti / WN x / TiN x diffusion barriers. The reduction of the value and the reduction of the gate sheet resistance value by the tungsten silicide film (WSi x ) of the WSi x / WN x diffusion barrier can be realized simultaneously.n n n n Gate stack, sheet resistance, contact resistance, tungsten silicide film, titanium film, diffusion barrier |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10686122-B2 |
| priorityDate | 2006-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.