| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28061 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3215
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 |
| filingDate |
1998-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0eb2840bf52cd6a53105b4a00f48548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51ad99a919c5a820e45e8a6bfddc86e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4db9134290f20abd587fb6aaef657ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c605f8be20d8084882e4c7bb829a32df |
| publicationDate |
1998-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0865074-A2 |
| titleOfInvention |
Process of making doped polysilicon layers and structures and process of patterning layers and layer structures which contain polysilicon |
| abstract |
The invention relates to a method for producing doped polysilicon layers and layer structures and to a method for structuring such layers and layer structures which comprise polysilicon layers. The doping process is characterized in that the doping compound is added as a process gas in the chemical vapor deposition of the polysilicon, but its supply to the process gas is stopped at the end of the gas phase deposition, so that an interface layer of undoped silicon is deposited. This achieves a favorable surface quality and better adhesion to a neighboring layer. The structuring process comprises an at least three-stage etching process, in which a fluorine-containing gas is used in a first stage, a chlorine-containing gas is used in a second stage and a bromine-containing gas is used for the etching in a third stage. The invention further relates to wafers and semiconductor chips that were produced using the doping method and / or the structuring method. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7504279-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100513637-C
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004038774-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004038774-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7344909-B2 |
| priorityDate |
1997-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |