http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-398035-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28061 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate | 1998-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d3525a1088e126858e4f55b12afd2fe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53c9ad8d4aa1f2efbfa3c0ea1338d3ca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b314e138ddd263e15cf7c02effb1ffcb |
| publicationDate | 2000-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-398035-B |
| titleOfInvention | Method and apparatus for performing chemical vapor deposition on silicide films |
| abstract | Methods and apparatus for improving chemical vapor deposition of silicide on gate level interconnects in integrated circuits in order to reduce abnormal oxidation and nucleation of the silicide are disclosed. According to one aspect of the present invention, a method for forming a gate level interconnect in an integrated circuit includes forming a substrate, depositing a layer of gate oxide over the substrate, and depositing a layer of polycrystalline silicon over the gate oxide. A first layer of silicide is formed over the layer of polycrystalline silicon using a first chemical vapor deposition process at a first deposition temperature, and a second layer of silicide is formed over the first layer of silicide using a second chemical vapor deposition process at a second deposition temperature. In one embodiment, the second layer of silicide is formed directly over the first layer of silicide. |
| priorityDate | 1997-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 55.