| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_52cd00892a548e92d179344efa0bd3bd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-034
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-909
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4941
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28061 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43 |
| filingDate |
1985-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f74ab7727417d71e7f419109ae92531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2a6687910c9e28714eff4f3b8d7744b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36b439c76c0ea6a242679b868c54e590 |
| publicationDate |
1993-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-0568108-A1 |
| titleOfInvention |
Method and structure for inhibiting dopant and/or silicon out-diffusion |
| abstract |
A method for inhibiting out-diffusion of dopants from polycrystalline or single crystal silicon substrates (12) of high speed semiconductor devices into metal silicide conductive layers disposed on the substrate comprises interposing a refractory metal nitride layer (18) between the doped silicon substrate (12) and the refractory metal silicide conductive layer (20). Dopant out-diffusion is further retarded, and contact resistance lowered, by adding a thin layer (16) of refractory metal between the refractory metal nitride layer (18) and the silicon substrate (12). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0751566-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6291885-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6437440-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0751566-A2 |
| priorityDate |
1984-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |