| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-903
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02672
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-18 |
| filingDate |
2007-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07f2a396109f54dedfcbfd1a20262dd4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61f7be1316bb8178811bdc98c008479d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c1a889cb7c7717f7f82df20a149bbcb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_352dbed74442848cdf6c604669cba6ad |
| publicationDate |
2008-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20080114068-A |
| titleOfInvention |
Zinc oxide semiconductor and method for manufacturing same |
| abstract |
A method for forming a zinc oxide semiconductor and a zinc oxide semiconductor produced thereby are disclosed. A metal catalyst layer is introduced on the zinc oxide thin film having n-type electrical properties, and heat-treated to modify the zinc oxide thin film having p-type electrical properties. Through the heat treatment, hydrogen atoms present in the zinc oxide thin film are removed by the metal catalyst. Therefore, the hydrogen atoms in the thin film are removed by the metal catalyst and the heat treatment, and the concentration of the holes as carriers increases. That is, the n-type zinc oxide thin film is modified with a high concentration of p-type zinc oxide semiconductor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220076886-A |
| priorityDate |
2007-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |