| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6704
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B7-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B13-00 |
| filingDate |
2008-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f57830129820fb82e083535144495b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd652201c84d1a9720c91696dade781e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f118c68543451588cad30208600d8b4 |
| publicationDate |
2010-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2010018553-A1 |
| titleOfInvention |
Method and apparatus for surface treatment of semiconductor substrates using sequential chemical applications |
| abstract |
A system and method for removing polymer residue from around a metal gate structure formed on a surface of a substrate during a post-etch cleaning operation includes determining a plurality of process parameters associated with the metal gate structure and the polymer residue to be removed. A plurality of fabrication layers define the metal gate structure and the process parameters define characteristics of the fabrication layers and the polymer residue. A first cleaning chemistry and second cleaning chemistry are identified and a plurality of application parameters associated with the first and second cleaning chemistries are defined based on the process parameters. The first and second application chemistries are applied sequentially in a controlled manner using the application parameters to substantial remove the polymer residue while preserving the structural integrity of the gate structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9093641-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102446729-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014038398-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8603837-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104451753-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102010042229-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102010042229-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013075146-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8945952-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9232652-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012260517-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017303080-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8394667-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I488225-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9006097-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8871107-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013295762-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014057371-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012100721-A1 |
| priorityDate |
2008-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |