| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 |
| filingDate |
2014-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d3b006a44a3def12c5453ec1478c36e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d7925cdde2e8daf50e25e1e4efdfb71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd48bab1b7d9e12bedf93f2993f244e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb9109cde37e9731a5d3435de2d621b1 |
| publicationDate |
2015-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015162201-A1 |
| titleOfInvention |
Semiconductor devices and methods of manufacturing the same |
| abstract |
In a method of manufacturing a semiconductor device, a dummy gate structure including a dummy gate electrode and a gate mask sequentially stacked on a substrate is formed. A spacer is formed on a sidewall of the dummy gate structure. The gate mask is formed to expose the dummy gate electrode and to form a recess on the spacer. A capping layer pattern is formed to fill the recess in the spacer. The exposed dummy gate electrode is replaced with a gate electrode. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106920771-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019165121-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106920750-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018350929-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11233194-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11367781-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10797155-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108987261-A |
| priorityDate |
2013-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |