| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66484 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate |
2002-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d55de82dc699a890a2196c56ea858d14 |
| publicationDate |
2002-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002368127-A |
| titleOfInvention |
Method for manufacturing dual gate of semiconductor device |
| abstract |
(57) Abstract: To prevent a gate oxide film from being damaged during excessive etching in a dual gate etching process. SOLUTION: After forming a field oxide film 110 and forming a gate oxide film 120 on a semiconductor substrate in which an active region and a field region are defined, an undoped gate oxide film is formed. After polysilicon is deposited and a photoresist mask is formed on one side of the undoped polysilicon layer 130, N + is formed on the other side of the undoped polysilicon layer 130. Ions are implanted to define N-doped polysilicon regions and undoped polysilicon regions, and a dual gate mask pattern 15 5 is formed, and the N-doped polysilicon and the undoped polysilicon are etched through a multi-step etching process using the dual-gate mask pattern 155, and then the dual-gate mask pattern 155 is removed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7208400-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008235534-A |
| priorityDate |
2001-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |