| abstract |
A method for manufacturing a semiconductor device with high uniformity and high yield is provided. A step of forming a nitride semiconductor layer on a substrate, and a first insulating film on the nitride semiconductor layer by an ALD method using steam oxidation using a source gas containing H 2 O. And forming a second insulating film on the first insulating film by an ALD method using oxygen plasma oxidation using a source gas containing O 2 or an ALD method using oxidation using a source gas containing O 3. Forming a gate electrode on the second insulating film, and forming a source electrode and a drain electrode on the nitride semiconductor layer, the nitriding The physical semiconductor layer includes a first semiconductor layer formed on a substrate and a second semiconductor layer formed on the first semiconductor layer. The above problem is solved. [Selection] Figure 7 |