| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca748d5cbfb6d9d2f2c6013230fccd73 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-349
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0466 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2012-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_444ba4bc5cbfe37362a4c38356462b91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9aa762a23dfebd68e66a18b20f9a8ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd7951732999b8dd16d43562d141922d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42e59952574d7d59f88286fe7d1c4672 |
| publicationDate |
2012-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201243951-A |
| titleOfInvention |
Oxide-nitride-oxide stack having multiple oxynitride layers |
| abstract |
A semiconductor device including a silicon-oxide-oxynitride-oxide-silicon structure and methods of forming the same are provided. Generally, the structure comprises: a tunnel oxide layer on a surface of a substrate including silicon; a multi-layer charge storing layer including an oxygen-rich, first oxynitride layer on the tunnel oxide layer in which the stoichiometric composition of the first oxynitride layer results in it being substantially trap free, and an oxygen-lean, second oxynitride layer on the first oxynitride layer in which the stoichiometric composition of the second oxynitride layer results in it being trap dense; a blocking oxide layer on the second oxynitride layer; and a silicon containing gate layer on the blocking oxide layer. Other embodiments are also disclosed. |
| priorityDate |
2011-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |