| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-779
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-774
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-943 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate |
2007-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2009-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2009545166-A |
| titleOfInvention |
How to remove nanoclusters from selected areas |
| abstract |
A method of manufacturing a semiconductor device includes a substrate (12) including a semiconductor layer (12) having a first portion (16) for a nonvolatile memory and a second portion (18) excluding the first portion (16). Including providing. A first dielectric layer (14) is formed on the semiconductor layer. Plasma nitridation is performed on the first dielectric layer. A first plurality of nanoclusters (20) are formed on the first portion, and a second plurality of nanoclusters (28) are formed on the second portion. The second plurality of nanoclusters is removed, a second dielectric layer (38) is formed on the semiconductor layer, and a conductive layer (40) is formed on the second dielectric layer. |
| priorityDate |
2006-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |