http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100957873-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2007-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2010-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-100957873-B1 |
| titleOfInvention | Gate oxide film formation method of a semiconductor device |
| abstract | The present invention relates to a method for forming a gate oxide film of a semiconductor device having triple gate oxide films having different thicknesses.n n n To this end, the gate oxide film forming method of the semiconductor device of the present invention, the first region on which the gate oxide film of the first thickness is to be formed, the second region on which the gate oxide film of the second thickness is to be formed, and the third thickness Defining a third region in which a gate oxide film of the first oxide film is to be formed, forming a first oxide film on the semiconductor substrate by a wet oxidation process, and forming a second oxide film on the first oxide film, and forming the first region. Blocking and removing the second oxide film and the first oxide film of the second and third regions, forming a third oxide film on the semiconductor substrate by a thermal oxidation process, and forming the first and second regions. Blocking and removing the third oxide film of the third region; and forming a nitride film sequentially by forming a fourth oxide film on the semiconductor substrate by a thermal oxidation process. Inversely, the gate oxide film having the triple structure of the first oxide film, the second oxide film, and the nitride film is formed, and the gate oxide film having the third oxide film / nitride film double structure is formed in the second region, and the fourth oxide film / nitride film double structure is formed in the third region. To form a gate oxide film.n n n n Triple Oxide, High Voltage, TEOS, Nitride, Triple Structure |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9786761-B2 |
| priorityDate | 2007-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.