| abstract |
A semiconductor structure comprising a thin gate dielectric selectively enriched with nitrogen. The amount of nitrogen introduced is sufficient to reduce or prevent gate leakage and dopant penetration, but does not significantly reduce device performance. A lower concentration of nitrogen is introduced into the gate dielectric of the pFET than in the gate dielectric of the nFET. Nitridation is selectively performed by various techniques including rapid thermal nitridation (RTN), furnace nitridation, remote plasma nitridation (RPN), decoupled plasma nitridation (DPN), well implantation or polysilicon implantation, or a combination thereof. can do. [Selection] Figure 6 |