http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006135235-A

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filingDate 2004-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2006-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2006135235-A
titleOfInvention Manufacturing method of semiconductor device
abstract PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which is low cost and simplified in a dummy gate pattern forming process. A method of manufacturing a semiconductor device, in which a mask material application step of applying a mask material 16 on a substrate 10 is patterned, the mask material 16 is patterned into a predetermined shape, and a recess H1 is formed in the mask material 16. A recess forming step, an arrangement step of disposing the functional liquid in the concave portion H1, a drying step of drying the functional liquid disposed in the concave portion, a baking step of the functional film formed by the drying step, and the mask material And a pattern forming step of forming a dummy gate pattern 20 made of the functional liquid constituent material by removing 16. [Selection] Figure 1
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