abstract |
Provided is a film forming method capable of generating an AlON film in which nitrogen is uniformly dispersed in the thickness direction even when the film thickness is large. An AlN film is formed on a SiC substrate of a wafer, and then an AlO film is formed, and an AlN film is formed on the formed AlO film by repeating AlO. An AlON film 25 having a laminated structure in which the films 24 and AlN films 23 are alternately laminated is formed, and the AlON film 25 having the laminated structure is subjected to heat treatment. [Selection] Figure 3 |