http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2355869-C
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_af99df08b153738cd418446a75d09bfc |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-472 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-631 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-471 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-114 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-151 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-468 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G61-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
| filingDate | 1999-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a75ec8c2a7b690816a0083f981e7f46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ac7c1958589dda23098020884a3679e |
| publicationDate | 2009-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-2355869-C |
| titleOfInvention | Semiconducting polymer field effect transistor |
| abstract | A field effect transistor is made of five parts. The first part is an insulator layer, the insulator layer being an electrical insulator such as silica, the insulator layer having a first side and a second side. The second part is a gate, the gate being an electrical conductor such as silver, the gate being positioned on the first side of the insulator layer. The third part is a semiconductor layer, the semiconductor layer including a polymer, at least ten weight percent of the monomer units of the polymer being a 9-substituted fluorene unit and/or a 9,9-substituted fluorene unit, the semiconductor layer having a first side, a second side, a first end and a second end, the second side of the semiconductor layer being on the second side of the insulator layer. The fourth part is a source, the source being an electrical conductor such as silver, the source being in electrical contact with the first end of the semiconductor layer. The fifth part is a drain, the drain being an electrical conductor such as silver, the drain being in electrical contact with the second end of the semiconductor layer. A negative voltage bias applied to the gate causes the formation of a conduction channel in the semiconductor layer from the source to the drain. On the other hand, a positive bias applied to the gate causes the formation of an electron conducting channel in the semiconductor layer. |
| priorityDate | 1999-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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