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filingDate 2004-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2006-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20060009017-A
titleOfInvention P-channel power MIS field effect transistor and switching circuit
abstract In a P-channel power MIS field effect transistor formed on a silicon surface having a substantially (110) plane, a gate insulating film that provides a breakdown voltage between the gate and the source of 10V or more and planarizes the silicon surface or contains Kr, Ar, or Xe Used.
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