http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-200841455-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1305 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41758 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-812 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate | 2007-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_092ecb0414405d4cf9d531e93906ea70 |
| publicationDate | 2008-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-200841455-A |
| titleOfInvention | Semiconductor device, and its manufacturing method |
| abstract | Provided are semiconductor devices having a reduced ear thing inductance, and a method for manufacturing the semiconductor device. This semiconductor device comprises a gate electrode, a source electrode and a drain electrode arranged on a first surface of a semi-insulating substrate (11) and having a plurality of fingers, an ear thing conductor (26) arranged on a second surface on the opposite side of the first surface, a gate terminal electrode (14), a source terminal electrode (18) and a drain terminal electrode (12) formed by bundling a plurality of fingers individually for the gate electrode, the source electrode and the drain electrode, action layers formed over the semi-insulating substrate (11) below the gate electrode, the source electrode and the drain electrode, multistage VIA holes composed of a smaller-diameter VIA hole (30); near the first surface and a larger-diameter VIA hole (20) near the second surface, and earth electrodes (23) formed in the inner wall face of the multistage VIA holes and in the second surface and connected with the source terminal electrode (18) from the ear thing conductor on the second surface side. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102263192-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102263192-A |
| priorityDate | 2007-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419491804 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359268 |
Total number of triples: 25.