| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_069302aee0d7eee291cd1e0ffa662781 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02148
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2004-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b9cca4b0ee692a012d834b2c53ae646
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d28c30fdb39a0e5f4ddfb8c0291e06c |
| publicationDate |
2005-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20050066936-A |
| titleOfInvention |
Semiconductor device, manufacturing method for the same, thin film forming apparatus and high dielectiric constant film forming method |
| abstract |
By controlling the metal concentration in the metal silicate film provided on the uppermost layer of the high dielectric constant film, a semiconductor device having C-V characteristics equivalent to the ideal C-V characteristics is realized.n n n In a semiconductor device in which a gate electrode 7b is formed on a silicon substrate 1 through a gate insulating film, a gate insulating film is formed on the silicon oxide film 4a and the silicon oxide film 4a formed on the silicon substrate 1. Formed on the Hf silicate film 5a and the Hf silicate film 5a, containing Hf at a peak concentration of 1 atomic% or more and 30 atomic% or less and nitrogen at a peak concentration of 10 atomic% or more and 30 atomic% or less. It consists of laminating | stacking containing nitrogen containing Hf silicate film 6a. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100689824-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100864871-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7713826-B2 |
| priorityDate |
2003-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |