| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2010-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8226fa8d309b53d5bca16d8fa07d1e07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e906610ca2c552d262eb0200bbf7c0fa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d741a2b1585d8d54cc89f79ef4a0e0da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8893c769178e9acd66101c776a38c30 |
| publicationDate |
2012-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-112010000953-T5 |
| titleOfInvention |
A method of manufacturing a silicon carbide semiconductor device |
| abstract |
An epitaxial layer stacking which enables both reduction of the height of a step accumulation and reduction of crystal defects due to failure of migration of reactive species on a terrace is formed on a SiC semiconductor substrate with a deviation angle of 5 ° or less. In a period from a time t1 to a time t2, a layer of a first layer-forming epitaxial layer is formed on and in contact with a surface of the SiC semiconductor substrate with a deviation angle of 5 ° or less at a growth temperature T1. The temperature in a reactor is reduced from the growth temperature T1 to a growth temperature T2. In a period of time from a time t3 to a time t4, the epitaxial growth of a second layer-forming epitaxial layer on and in contact with a surface of the epitaxial layer constituting the first layer is carried out at the growth temperature T2 (<T1). In the manner described above, the epitaxial layer is formed with two layers, wherein the growth temperature for the second epitaxial layer is set lower than the growth temperature for the first epitaxial layer. |
| priorityDate |
2009-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |