| abstract |
(57) [Summary] [Object] In a semiconductor device including a GAA (Gate All Around) transistor, by increasing the number of layers of the GAA transistor and miniaturizing the structure, the degree of integration of the semiconductor device is increased, and a manufacturing method therefor is obtained. . [Structure] First silicon oxide film 2 on semiconductor substrate 1 After forming the opening 4 by anisotropic etching, a dummy member is embedded in the opening 4 and the channel silicon film 3 of the transistor is formed thereon by a thin film forming method. Then, after the dummy member is removed, the gate electrode 6 which is formed so as to cover the channel silicon film 3 and forms a channel on both sides of the channel silicon film 3 is formed by utilizing the void of the opening 4. [Effect] Since the channel silicon film 3 is composed of polysilicon and is not composed of silicon single crystal, it can be multi-layered. Moreover, since the opening 4 is provided by anisotropic etching, a fine structure can be obtained. |