| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2008-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83a635e97e26d5017dc4c4b8a17c1dc9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e432e03d83281a7953d3188091956c0e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89ce31d3641e61d30984549171309fd4 |
| publicationDate |
2009-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20090130091-A |
| titleOfInvention |
Manufacturing method of SOI substrate and semiconductor device |
| abstract |
One object of the present invention is to provide a method for producing a high yield of SOI substrates having SOI layers that can be used in practical applications, even when using flexible substrates such as glass substrates and plastics. Further, another object of the present invention is to manufacture an ultra-thin semiconductor device using such an SOI substrate with high yield. When bonding a single crystal semiconductor substrate to a flexible substrate having an insulating surface, and peeling the single crystal semiconductor substrate to produce an SOI substrate, after activating one or both sides of the bonding surface, the flexible substrate having an insulating surface and a single crystal semiconductor Bond the substrate. |
| priorityDate |
2007-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |