| abstract |
The present invention comprises an n-channel or bipolar field-effect transistor comprising an organic semiconductor layer having an electron affinity (EA semicond ) and an organic gate insulating layer forming an interface with the semiconductor layer, bulk concentration of trapping groups is less than 10 18 cm -3, wherein the trapping groups (ⅰ) EA semicond and a match, or a group having a large electron affinity (EA X) / or (ⅱ) (EA semicond -2eV ) Or a group having a large reactive electron affinity. n n n-channel, electron affinity, gate insulating layer, semiconductor layer, organic insulating material. |